Abstract
Simultaneous manipulation of the magnetic and electric properties of a material by an electric field has been a recent focus of particular interest. In this work, we report such behavior in an Ag/Ti/Fe3O4/Pt device, where the Fe3O4 film with a (111) preferred orientation is selected as the magnetic functional layer. We have shown that the Ag/Ti/Fe3O4/Pt device studied here displayed reversible and stable bipolar resistive switching (RS) behavior accompanied by a significant change in the magnetization during set and reset operations. Further analysis indicated that a redox reaction between Fe3O4 and γ-Fe2O3 occurs near the Pt bottom electrode (BE) which may play an important role in this phenomenon. This finding makes Fe3O4 a promising candidate for multi-dimensional memory devices.
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