Abstract
Spectroscopic electric-field-induced second harmonic generation on a Si(111)–SiO2–Cr metal-oxide-silicon structure shows a bias-independent ‘‘interface’’ resonance at 3.25 eV and a ‘‘bulk’’ resonance at 3.43 eV which is strongly bias dependent. The symmetry forbidden bulk dipole contribution becomes observable, and even dominating, due to the bias-induced band-bending that breaks the bulk inversion symmetry. The origin of these resonances is discussed, as well as the prospects for using second harmonic generation as a probe of metal-oxide-silicon characteristics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.