Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors

Abstract

The electric field-induced surface and interface roughness scatterings have been investigated by taking both the forward and converse piezoelectric effects into account in AlGaN/GaN high electron mobility transistors. The results show that the converse piezoelectric effect can compensate the polarization fields in the barrier of AlGaN/GaN heterostructure, leading to weaker electric field scatterings. Additionally, the electronic mobilities limited by both surface and interface roughness can be modulated by the gate bias, based on which we can design the devices to obtain higher mobility.