Abstract
Resistance random access memory (ReRAM) is attractive as a next generation nonvolatile memory. We investigated an electric field induced resistance change of SrFeO3-x (SFO) film as a candidate of RRAM material. As-deposited SFO film with high oxygen deficiency, which is expected to have a high oxygen percolation, barely showed hysteresis in current-voltage curve. On the other hand, the annealed sample showed a distinct hysteresis. The amount of oxygen in the sample and easiness of oxygen migration play an important role of the resistance switching properties. [DOI: 10.1380/ejssnt.2010.346]
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