Electric field induced oscillating electron mobility in asymmetric wide GaAs/AlxGa1−xAs quantum well structure

Abstract

For the first time, we show that an oscillatory enhancement of low temperature electron mobility μ can be achieved in an asymmetric GaAs/AlxGa1−xAs wide quantum well structure by applying an external electric field F perpendicular to the interface plane. We show that the oscillating nature of μ as a function of F is mostly due to the contribution of the higher subband through intersubband effects when there is double subband occupancy. We further show that the wavy nature of μ can be enhanced by increasing the well width, surface electron density, and also by considering a double quantum well structure. Our results can be utilized for low temperature device applications.