Abstract
For the first time, we show that an oscillatory enhancement of low temperature electron mobility μ can be achieved in an asymmetric GaAs/AlxGa1−xAs wide quantum well structure by applying an external electric field F perpendicular to the interface plane. We show that the oscillating nature of μ as a function of F is mostly due to the contribution of the higher subband through intersubband effects when there is double subband occupancy. We further show that the wavy nature of μ can be enhanced by increasing the well width, surface electron density, and also by considering a double quantum well structure. Our results can be utilized for low temperature device applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
