Abstract
In this article, the non-monotonic electron mobility (μ) is modulated by applying an external electric field (Fext) in pseudomorphic Al0.3Ga0.7As/In0.15Ga0.85As asymmetric coupled quantum well (ACQW) structure. The structural asymmetry is achieved through dissimilar doping in the side barriers. Application of a specific Fext (here, Fext = 6.66 kV/cm) makes the proposed structure potentially symmetric causing resonance of subband states (RSS) between the wells. Near resonance, the drastic change in the distribution of subband wave functions leads to cusp like variation of the scattering rate matrix elements resulting non-monotonic nature of μ. We show that the variation of μ is mostly due to the ionized impurity scattering mediated by intersubband effects. However, there is a sudden drop in mobility due to interface roughness scattering i.e., μir at RSS and subsequently, it reduces the overall magnitude of μ. We show that μ can be enhanced with a sharp drop at the resonance point by increasing the well width, central barrier width, spacer width, or doping region width of the proposed structure. The results obtained can be utilized to improve the performance of negative resistance based low dimensional device structures.
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