Abstract
Abstract Hole de-trapping dynamics out of shallow acceptors subjected to high pulsed electric fields is investigated in pure p-GaAs used in radiation detectors. The characteristic de-trapping times are found from current transients due to impact and tunnel ionization of the acceptors. The de-trapping times are presented as a function of electric field strength.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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