Abstract
We report the anisotropic excitonic optical properties (polarization dependent photoemission and photoabsorption) induced by applying a lateral electric field in a single semiconductor quantum dot. The excitonic optical polarization characteristics are examined using theoretical calculation and optical measurement. The optical properties are numerically analyzed taking into account the quantum dot potential, electric field, and electron–hole Coulomb interaction. We evaluate the polarization properties from calculated exciton wave functions. The polarization properties depend strongly on the size of the quantum dots and the spatial symmetry of the hole part of the wave function. There is large electric-field-induced anisotropy in thin quantum dots to a larger lateral extent even where the polarization properties are completely isotropic without an electric field. We compare the theoretical results with experimental results for InGaAs quantum dots obtained using the microphotoluminescence technique. Qualitative agreement between the theoretical results and experimental ones is obtained.
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