Electric field gradients in Si induced by uniaxial stress

Abstract

The effects of lattice deformations by the application of uniaxial mechanical stress was studied by means of the perturbed angular correlation technique in 100 μm thin Si wafers. It was found that the application of stress along the three major lattice directions 〈100〉, 〈110〉 and 〈111〉 leads to a deformation of the lattice around the In probe and this deviation from the perfect cubic symmetry induces an electrical field gradient at the In site. Further, evidence was found for a mismatch of the lattice parameters between the In implanted layer and the surrounding pure Si substrate.