Abstract

In this work, the effects of the electric field on the optical properties of the symmetric and asymmetric double semi-parabolic quantum wells (DSPQWs) are investigated numerically for typical GaAs/Al x Ga 1− x As. Optical properties are obtained using the compact density matrix approach. Our calculations for the asymmetric DSPQW show that the resonant peak values of the total refractive index change and total optical absorption coefficient are maximum for a certain value of the applied electric field, due to the anti-crossing effect. However, for the symmetric DSPQW, the resonant peak values of these optical properties decrease monotonically with increasing the applied electric field. Also, our results indicate that a larger value of the optical rectification coefficient of the symmetric DSPQW can be induced by applying a small electric field.

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