Abstract
Electron and hole dynamics from self-assembled quantum dots (QDs) subject to vertical electric fields have been studied by observing the photoluminescence (PL) image on the sample surface. We have observed an asymmetric profile associated to migration of optically excited electron and holes in the quantum dot structure. The asymmetric profile is increased by rising the applied bias voltage. This behaviour was associated with charge accumulation at different regions of the QD layer plane due to an asymmetric electric field, upon which the QDs are immersed.
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