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Abstract
The electric field effect on the emission rate enhancement of the H4F and H4S hole trap in highly Zn-doped InP has been examined using the deep level transient spectroscopy (DLTS) and double correlation DLTS (DDLTS). The DLTS and DDLTS results have been found to be in good agreement for low and intermediate electric fields, but they disagree for large field effect. Comparing our emission data with the theory, we have found that H4F obeys the quantum model of phonon-assisted tunneling, while H4S follows the Poole–Frenkel model employing a three-dimensional screening Coulombic potential. Our results show that the H4S defect can be attributed to a charged (Vp–Zn) complex.
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