Abstract
The electric field effect on magnetic anisotropy was investigated for the FePt1-xPdx alloy films with perpendicular magnetic anisotropy. The polar magneto-optical Kerr (p-MOKE) loops were measured under the electric field application in order to evaluate the electric field-induced perpendicular magnetic anisotropy change per area (Δεperpt). A clear change in the saturation field of p-MOKE loop was observed for FePt by varying the applied electric field (ΔE). In the case of FePt, Δεperpt divided by ΔE was evaluated to be -129 (fJ/Vm). We found that the magnitude of Δεperpt / ΔE was significantly reduced with increasing x.
Highlights
Spintronics is a research field utilizing the properties of charge and spin simultaneously
We investigated the electric field effect on the magnetic anisotropy for the FePt1-xPdx ternary alloy systems in order to obtain a guiding principle for developing a material showing a large electric field effect and a high Ku simultaneously
Thin films were prepared on a MgO (001) single crystal substrate employing an ultrahigh vacuum magnetron sputtering system equipped with four sputtering cathodes and one electron beam (EB) gun for EB evaporation, and an atomic layer deposition (ALD) system
Summary
Spintronics is a research field utilizing the properties of charge and spin simultaneously. A conventional way is to employ the spin (angular momentum) transfer from the conduction spins to the local spins of nanomagnet,[1,2] in which the spin-polarized electric current is directly injected into the nanomagnet This spin transfer switching requires the electric power lower than that for a classical switching method using the Oersted field,[3] still a large energy of ∼ 100 fJ is typically needed. This suggests that an alternative is inevitable to realize a low power-operated MRAM. Electric field-induced magnetization switching has been demonstrated for tunnel magnetoresistance devices with an ultrathin FM metal.[15,16,17] one expects that the electric field control of magnetism in a metal is a key for generation MRAM operated with ultralow external power
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