Electric field effect on binding energies of impurity states in II–VI and III–V quantum wires of polar semiconductors

Abstract

The effects of electric field on the hydrogenic impurity states in quantum wire are studied by a variational method. The binding energy is calculated as functions of the transverse dimension of the quantum wire, and the donor-impurity position for different fields. The electron-phonon interaction is considered in the calculations by taking both the confined bulk longitudinal optical (LO) phonons and interface optical (IO) phonons as well as the impurity-ion phonon coupling. The numerical results for several II–VI and III–V quantum wires are given and discussed as examples. The calculated results confirm that the electron-phonon interaction reduces the binding energies of impurity states and enhances the stark shifts.