Abstract
A nano-channel with a laterally placed gate electrode was fabricated using a YBa2Cu3O7-δ film on a SrTiO3 substrate. Current-voltage curves were measured at various applied gate voltages at 4.2 K. The current increased with decreasing the gate voltage. The carrier concentration was modified by the applied gate voltage. At the small source-drain voltage, the physical factor derived from superconductivity also has an influence.
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