Abstract
We have investigated the influence of a grain boundary in (YBCO) thin films on the transport properties and electric field effect. A superconducting field effect device structure with a grain boundary in YBCO thin films, covered with an gate layer, was fabricated by pulsed laser deposition. The grain boundary was formed by the selective growth of the c-axis and in-plane aligned, a-axis-oriented YBCO films on the same (100) substrate with b-axis-oriented patterns. The resistance versus temperature curve of the YBCO microbridge with a grain boundary showed a significant decrease of the zero resistance temperature to 35 K as well as broadening of the superconducting transition width compared to the c-axis- and a-axis-oriented YBCO thin film sections. By applying a gate voltage of 1 V, the superconducting transition temperature of the YBCO channel containing grain boundary was modulated up to 11.4%
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