Abstract
This paper presents our results on the significant effect of application of electric field during deposition on various properties of thin SnO2 films, especially in the ultrathin regime. SnO2 films of 25-75nm deposited on glass substrates without and with the presence of electric field (32V/cm) during deposition were compared. It is found that the presence of field has improved the crystallinity and stoichiometry of the film along with its transmittance. Significantly high mobility of 43cm2/V.s at low thickness of 25nm resulted in a reasonably low resistivity of 1.5ohm-cm as a consequence of the field assisted growth.
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