Abstract
With the development of the high voltage insulated gate bipolar transistor (IGBT) power module, it leads to serious problems concerning the electric field insulation. The electric field capabilities of the silicone gels used in the power module encapsulation directly affect the module insulation. Some solutions have been developed to optimize the electric field and reliability. In this letter, the finite element simulation was used to analyze and localize the maximum electric field position; solutions were proposed to improve the module insulation. It’s demonstrated that BaTiO3 silicone composite is a promising insulation material for high voltage power device.
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