Abstract
The physical behavior of electrode contacts and their technology is an active field of interest in room-temperature semiconductor detectors, where low currents at high electric fields are extremely desirable. Recently, CdTe detectors having a diode-like In/CdTe/Pt structure have been realized which are able to sustain very high applied reverse voltages while limiting the dark current at low values; moreover, in terms of energy resolution, they show excellent characteristics respect to conventional devices based on symmetric contacts. In this work, we investigate the electric field distribution inside these diode-like detectors by using the linear electro-optic effect (Pockels effect). We also discuss their local charge collection properties, accessed by performing IR pulsed laser experiments. These techniques, in conjunction with the analysis of current–voltage curves, allow us to consistently evidence the strong hole-blocking nature of the In contact. In order to analyze the different characteristics of the In and Pt contacts and how these contacts affect the detector charge collection properties, we compare the results with those obtained from a conventional Pt/CdTe/Pt structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
