Abstract
Magnetic anisotropy energy (MAE) of a Ru monolayer on MgO(001) substrate under the application of an electric field is investigated by using first-principles calculations. Owing to the large spin orbit coupling in Ru atoms, both MAE and its rate of change against electric field are about 3 times as large as those of an Fe monolayer on MgO(001) substrate. The change rate of MAE of Ru/MgO has an opposite sign to that of Fe/MgO, which originates from the modification of the band structure near the Fermi energy around Γ¯ point caused by the application of an electric field.
Highlights
Magnetic anisotropy is an important property of ferromagnetic materials for storage applications such as hard disk drives (HDDs), and magnetic random access memories (MRAMs)
Since most part of magnetic anisotropy energy (MAE) in ferromagnetic film is the magnetocrystalline anisotropy energy (MCAE), an efficient electric field control of a giant magnetic anisotropy can be expected for ferromagnetic thin films of 4d transition-metals such as Ru or Rh
We investigate the MAE of a Ru ML on MgO(001) substrate, which is hereafter represented as Ru/MgO, under an electric field by using first-principles calculations based on the full-potential linearized augmented plane wave (FLAPW) method
Summary
Magnetic anisotropy is an important property of ferromagnetic materials for storage applications such as hard disk drives (HDDs), and magnetic random access memories (MRAMs). Imamuraa National Institute of Advanced Industrial Science and Technology(AIST), Spintronics Research Center, Tsukuba, Ibaraki 305 8568, Japan (Received 12 January 2017; accepted 27 March 2017; published online 7 April 2017)
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