Electric field dependence of the electron drift velocity in n-type InxGa1-xAs1-yBiy epilayer

Abstract

The effect of Bi incorporation into InxGa1-xAs lattice on the nanosecond pulsed electric field dependence of the drift velocity of electrons in n-type InxGa1-xAs1-yBiy alloys with various doping densities is investigated at room temperature. The electronic band structure of the alloys is calculated by Finite Element Methods (FEM). The electron temperature is determined from analytical modeling of the power dissipation mechanism. The drift velocity of the electrons (vdrift) does not saturate up to 5.4 kV/cm electric field for the lowest doping density sample. The sample is burned out at a higher electric field due to the impact ionization mechanism. However, the vdrift saturates at a high electric field region in the samples with higher doping densities, and the saturation of electric field values of vdrift depends on the doping density for these samples. The highest electron drift mobility (μdrift) is obtained as 6236 cm2/Vs for the sample with the lowest electron density. The heating of the only electrons through the applied electric field is not enough to initiate inter-valley transfer because of scatterings during transport. Hence, the electric field dependence on electron transport occurs only in the central valley. The effect of the scatterings on the electron transport is identified by considering ionized impurity and phonon scatterings.