Electric field coupling to quantum dot diodes

Abstract

We have fabricated two different structures in the GaAs/AlGaAs heterojunction system to quantify the transfer characteristics of the quantum dot subjected to external, local electric fields. The first structure is a single quantum dot diode with an annular field electrode placed adjacent to the double-barrier structure by a self-aligned fabrication process. A second structure consists of a pair of independently contacted quantum dot diodes separated by several hundred angstroms. The fabrication processes and transport properties for both of these structures are described. We have also attempted for the first time to form quantum dots in InGaAs/AlAs system lattice matched to InP and have observed that strong conductance fluctuations not related to lateral size quantization can occur. These fluctuations arise from the formation of rotation-induced finite superlattices.