Electric-Field-Controlled Room Temperature AMR Switching in a NiFe/BiFeO<sub>3</sub>/SrRuO<sub>3</sub>/SrTiO<sub>3</sub> (111) Heterostructure

Abstract

Ta/NiFe/BiFeO3 (BFO)/SrRuO3/SrTiO3 (111) heterostructure has been fabricated by pulsed laser deposition and magnetic sputtering. The BFO film is pure and highly (111)-oriented. A typical anisotropic magnetoresistance (AMR) effect has been observed by four probes technique at room temperature. When applying an out-of-plane electric field, remarkable reverses of the AMR phase have been observed several times from about −0.015% to about 0.015% in our experiment. These results indicate that a reversible out-of-plane electric field control of magnetization in ferromagnetic layer could be achieved through multiferroic BFO at room temperature.