Abstract
Intense photoluminescences (PL) at wavelenghts near 600 nm are observed when either the (100) or (111) surface of the electrochemically etched silicon wafers are illuminated by the 514.5 nm argon laser line. A fascinating phenomenon has been discovered indicating that the PL intensity can be suppressed exhaustively by applying an electric field parallel to the surface. The PL recovers its intensity very slowly when the bias is taken off, suggesting that the slow relaxation of the accumulate charges inside the porous silicon.
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