Abstract
We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. The carrier distribution and therefore the strength of the effective anisotropy are controlled by the gate voltage of a field effect device. Anomalous Hall effect measurements confirm that a depletion of carriers in the upper (Ga,Mn)As layer results in the decrease of the in-plane anisotropy. The uniaxial anisotropy field is found to decrease by a factor ∼4 over the explored gate-voltage range so that the transition to an out-of-plane easy-axis configuration is almost reached.
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