Abstract
We report on the marked change in magnetic anisotropy and magnetization reversal in Co50Fe50/[Pb(Mg1/3Nb2/3O3)]1−x–[PbTiO3]x (PMN–PT) and Co43Ni57/PMN–PT heterostructures under an electric field. For the Co50Fe50/PMN–PT structure, the electric-field-induced magnetic anisotropy field can be as large as 1.2 kOe at 12 kV/cm, corresponding to a magnetoelectric coefficient of 100 Oe cm/kV. In the Co43Ni57/PMN–PT heterostructure, the electric-field-induced anisotropy has a sign opposite to that in Co50Fe50/PMN–PT. As a result, in the [CoNi/Cu/CoFe/Cu]n/PMN–PT heterostructure, the parallel magnetic moment between two magnetic layers in the initial state may become perpendicular under an electric field. On the basis of these discussions, a voltage-write magnetoelectric memory device model is proposed.
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