Abstract
We discuss on the broadening of ground-state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge in the presence of electric fields and their gradients arising from randomly distributed ionized impurities. Low-temperature ( T=3.2 K ) far-infrared absorption spectra of strongly compensated n-type Ge:(As,Ga) have been obtained for samples having ionized impurity concentration N I =2.2×10 13–2.6×10 14 cm −3 . Absorption peaks corresponding to 1s–2p ± transition of arsenic impurities are observed, and broadened linearly with the ionized impurity concentration due to interactions between electrons and the quadrupole moments of ionized donors. The slope of the peak line width plotted against N I changes at N I ≈8×10 13 cm −3 due to the transition of ionized impurity distribution from random ( N I <8×10 13 cm −3 ) to correlated ( N I >8×10 13 cm −3 ).
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