Abstract
While p–n homojunctions in two-dimensional transition metal dichalcogenide materials have been widely reported, few show an ideality factor that is constant over more than a decade in current. In this paper, electric double layer p–i–n junctions in WSe2 are shown with substantially constant ideality factors (2–3) over more than 3 orders of magnitude in current. These lateral junctions use the solid polymer, polyethylene oxide: cesium perchlorate (PEO:CsClO4), to induce degenerate electron and hole carrier densities at the device contacts to form the junction. These high carrier densities aid in reducing the contact resistance and enable the exponential current dependence on voltage to be measured at higher currents than prior reports. Transport measurements of these WSe2p–i–n homojunctions in combination with COMSOL multiphysics simulations are used to quantify the ion distributions, the semiconductor charge distributions, and the simulated band diagram of these junctions, to allow applications to be more clearly considered.
Highlights
While p–n homojunctions in two-dimensional transition metal dichalcogenide materials have been widely reported, few show an ideality factor that is constant over more than a decade in current
With a positive bias applied to the right contact with respect to the left contact, ions accumulate at the contacts as indicated in the schematic with the bulk of the PEO:CsClO4 remaining charge neutral
Lateral electric double layer (EDL) WSe2 p–i–n junctions are demonstrated with substantially constant ideality factors over nearly 4 orders of magnitude using PEO:CsClO4 to accumulate electrons and holes at the channel contacts
Summary
While p–n homojunctions in two-dimensional transition metal dichalcogenide materials have been widely reported, few show an ideality factor that is constant over more than a decade in current. Electric double layer p–i–n junctions in WSe2 are shown with substantially constant ideality factors (2–3) over more than 3 orders of magnitude in current These lateral junctions use the solid polymer, polyethylene oxide: cesium perchlorate (PEO:CsClO4), to induce degenerate electron and hole carrier densities at the device contacts to form the junction. These high carrier densities aid in reducing the contact resistance and enable the exponential current dependence on voltage to be measured at higher currents than prior reports. The doping method described in this paper has allowed demonstration of a homojunction W Se2 Esaki tunnel diode[23]
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