Abstract
Conditions for the generation of electromagnetic radiation by spin-polarized electron transport through a junction made on the basis of an InSb semiconductor and an HgCr2Se4 or Co2MnSb ferromagnetic material are investigated. It is shown that electromagnetic radiation from the junction appears only when the electron flow passing from the ferromagnet to the InSb semiconductor is polarized. The radiation intensity is found to depend on the direction of the external magnetic field with respect to the InSb crystal axes. Maximum intensity values are observed for the field directions corresponding to the highest probability of electric dipole spin transitions between Zeeman levels.
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