Abstract
A self-cooling device has been developed by combining a commercial n-channel power metal–oxide–semiconductor field-effect transistor (MOSFET) and single-crystalline Sb-doped n-type or B-doped p-type silicon wafers in order to improve the heat removal or cooling quantitatively. The electric current dependence of the temperature distribution in the self-cooling device and the voltage between the source and drain electrodes have been measured to estimate the Peltier heat flux. We found that the average temperature is decreased for a power MOSFET in which an electric current of 50 A flows. In particular, the average temperature of the power MOSFET was decreased by 2.7°C with the n-type Si wafer and by 3.5°C with the p-type Si wafer, although an electric current of 40 A makes little difference. This certainly warrants further work with improved measurement conditions. Nonetheless, the results strongly indicate that such n-type or p-type silicon wafers are candidate materials for use in self-cooling devices.
Highlights
Silicon semiconductor power devices, including metal–oxide–semiconductor field-effect transistors (MOSFETs), insulated gate bipolar transistors (IGBTs), and central processing units (CPUs), are used in daily life to enable our modern lifestyles
The aim of this study is to develop the self-cooling device using an n-type or p-type silicon wafer to estimate the heat removal quantitatively in order to improve the cooling of power MOSFETs
The average temperature on the power MOSFET was decreased by 2.7°C with the n-type Si wafer
Summary
Silicon semiconductor power devices, including metal–oxide–semiconductor field-effect transistors (MOSFETs), insulated gate bipolar transistors (IGBTs), and central processing units (CPUs), are used in daily life to enable our modern lifestyles. During use of electrical equipment incorporating such devices, improvement of heat removal or cooling is one of the most important issues, because they do not function correctly if operated at temperatures above 150°C. There are two conventional ways to remove heat from power devices. One is to use a fin and fan connected to the power devices, i.e., a conventional cooling system based only on thermal conduction. The other is to use a Peltier module with a large fin and fan using only the Peltier heat flux. When using these methods to cool power devices, the electric power consumption is (Received June 29, 2013; accepted October 7, 2013; published online October 30, 2013)
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