Abstract

We investigated friction on an n-type silicon surface using an atomic force microscope when a bias voltage was applied to the sample. Friction forces on the same track line were measured before and after the bias voltages were applied and it was found that the friction forces in n-type silicon can be tuned reversibly with the bias voltage. The dependence of adhesion forces between the silicon nitride tip and Si sample on the bias voltages approximately follows a parabolic law due to electrostatic force, which results in a significant increase in the friction force at an applied electric field.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call