Electric conductivity and dielectric permittivity of mixed electronic–ionic conductivity compounds (BS) 1− x(DAsS 2) x (B=Ge, Pb; D=Ag, Cu)

Abstract

The temperature dependencies of the electrical conductivity and dielectric permittivity of (BS) 1− x (DAsS 2) x (B=Ge, Pb; D=Ag, Cu) were investigated by means of impedance measurements in the frequency range between 10 −2 and 10 5 Hz and at temperatures between 78 and 500 K. In all chalcogenides, ionic conductivity (Ag + or Cu +) was found. The onset of ionic transport was found at 115–120 K for AgGeAsS 3 and 110–115 K for CuGeAsS 3. The complex impedance and admittance plots, the electrical properties and the X-ray structure data are given.