Abstract
AbstractThis work presents results of investigations of Al2O3 thin films, deposited on Si substrates by means of impulse plasma deposition (IPD). Round, aluminum (Al) electrodes were evaporated on the top of deposited layers. Thus, metal‐insulator‐semiconductor (MIS) structures were created with aluminum oxide thin films playing the role of the insulator. It enabled subsequent electrical of studied material. Al2O3 layers were selective etched in a buffer of hydrofluoric acid. The photoresist was used as a masking material. The influence of etching time on the photoresist mask, etching progress, and the state of exposed Si surface was subsequently studied and is discussed. Films' microstructure were additionally studied by scanning electron microscopy (SEM).
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