Abstract
The electric characteristics of individual multi-wall carbon nanotubes (MWNTs) irradiated with highly charged ions were evaluated. Each MWNT was located on a highly doped Si substrate with a source/drain contact, forming a back-gate FET configuration. We used highly charged Ar ions (Ar8+, Ar11+, and Ar14+) extracted from an electron beam ion source. We measured the current–voltage curves of the MWNTs irradiated at fluences in the 1011–1013 cm−2 range. The Ar8+ irradiation caused a 10% increase in the resistivity at room temperature at a fluence of 6 × 1011 cm−2. The resistivity at room temperature for the MWNT samples with a high fluence of 1013 cm−2 reached values higher than five times the original values. The current–voltage characteristics at low temperature became nonlinear and Coulomb oscillations were observed in the gate voltage dependence of the drain current. One of the samples exhibited Coulomb diamond characteristics particular to single quantum dot at 1.6 K.
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