Abstract

For organic-inorganic perovskite to be considered as the most promising materials for light emitting diodes and solar cell applications, the active materials must be proven to be stable under various conditions, such as ambient environment, heat and electrical bias. Understanding the degradation process in organic-inorganic perovskite light emitting diodes (PeLEDs) is important to improve the stability and the performance of the device. We revealed that electrical bias can greatly influence the luminance and external quantum efficiency of PeLEDs. It was found that device performance could be improved under low voltage bias with short operation time, and decreased with continuous operation. The degradation of perovskite film under high electrical bias leads to the decrease of device performance. Variations in the absorption, morphology and element distribution of perovskite films under different electrical bias revealed that organic-inorganic perovskites are unstable at high electrical bias. We bring new insights in the PeLEDs which are crucial for improving the stability.

Highlights

  • Organic-inorganic halide perovskite materials, methylammonium lead halide (MAPbX3, X = Cl, Br, I) and formamidinium lead halide (FAPbX3, X = Cl, Br, I), have attracted much attention for photovoltaic recently, due to high absorption coefficients, long charge carrier diffusion lengths and solution processability[1,2,3,4,5]

  • It is shown that electrical bias can improve or degrade the device performance depending on the magnitude of the bias

  • For MAPbBr3 synthesis, a 200 μL solution containing 0.1 mmol PbBr2, 0.15 mmol MABr, 20 μL oleylamine and 500 μL oleic acid in dimethylformamide were added into 10 ml toluene at room temperature to produce the colloidal solution

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Summary

Introduction

This observation is different from what are often observed, where electrical bias/scan generally degrade the device. It is shown that electrical bias can improve or degrade the device performance depending on the magnitude of the bias. The device performance was measured every 10 s during the electrical bias.

Results
Conclusion
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