Abstract
Among the various unique properties of two-dimensional materials, the ability to form a van der Waals (vdW) heterojunction between them is very valuable, as it offers a superior interface quality without the lattice mismatch problem. In this work, a ReS2/ReSe2 vdW heterostructure was fabricated, and its electrical and photovoltaic behaviors were discovered. The heterojunction showed a gate-tunable diode property with the maximum rectification ratio of 3150. Under illumination, it exhibited a photovoltaic effect with an efficiency of ∼0.5%. This study outlines the potential of Re-based 2D semiconductors and their integration by forming a vdW heterojunction for use in optoelectronic devices.
Highlights
Transition metal dichalcogenides (TMDs) are a family of two-dimensional (2D) materials having formula of MX2, where M is a transition metal and X is a chalcogen
Due to the weak van der Waals force between the atomic layers,[1] bulk TMDs are separated into multi-layers by mechanical exfoliation using adhesive tape.[2,3]
TMDs have been studied for many types of applications such as field-effect transistors (FETs),[6,7,8,9] gas sensors,[10,11,12] inverters,[13,14,15] photodetectors,[16,17,18] and solar cells.[19,20]
Summary
Transition metal dichalcogenides (TMDs) are a family of two-dimensional (2D) materials having formula of MX2, where M is a transition metal and X is a chalcogen. Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure Several studies have been conducted on the behavior of the vdW heterostructure of 2D semiconductors.[23,24] Furchi et al.,[25] Wang et al.,[22] Flory et al.,[26] and Pezeshki et al.[23] have reported on the photovoltaic characteristics of various TMD heterojunctions.
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