Abstract
The study of electric and photoelectric properties of anisotypic ZnO:Al/n-CdS/p-Cd1−xZnxTe heterojunctions made on unannealed and annealed substrates at high temperature (T = 1200 K) under conditions of minimum cadmium vapor pressure. Sequential application of CdS and ZnO:Al films to the surface of unannealed substrates of single-crystal p-Cd1−xZnxTe was performed by high-frequency magnetron sputtering. Based on the C-V-characteristics analysis, the main parameters of the barrier region of the obtained structures ZnO:Al/n-CdS/p-Cd1−xZnxTe have been determined and the dynamics of their change when irradiated with light of different wavelengths had been established. A relationship between physical processes that lead to a decrease in the concentration of deep levels in the n-CdS/p-Cd1−xZnxTe interface and the properties of the base material has been established.
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