Abstract
AbstractThe basic problems of porous silicon (PS) transport, like long time constants, ageing, and the influence of contacts are discussed. The results of the steady‐state and transient photoconductivity on the self‐supporting p‐ and n‐type PS are presented and the resulting conclusions, related to the microstructure isotropy, trapping, and time‐dependent electric field redistribution are summarized. On the basis of the dark I–U characteristics and their temperature dependencies the different volume and surface transport mechanisms are discussed. The compatibility of the models of explanation of the strong PS photoluminescence with our transport results is discussed.
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