Abstract
We have studied the photoluminescence properties of modulation n-doped ZnSe/BeTe/ZnSe type-II quantum wells. The luminescence spectra and the polarization anisotropy depend strikingly on both the n-doping into the barrier layers and an applied external electric field perpendicular to the layers. These are explained by screening of a built-in electric field with n-doping and Stark effects due to the applied electric field. We find optical Shubinkov–de Hass oscillations in both the photoluminescence intensity and the transition energy under a high magnetic field perpendicular to the well. These features and additional infrared cyclotron-resonance measurements demonstrate that two-dimensional electron gas of a high concentration has been formed in the doped samples. All these present the signature of the charged excitons and also of a correlated excitonic phase of type-II quantum wells.
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