Abstract
We study ballistic electron transport through silicene barriers, of width d and height U, in the presence of an exchange field M and a normal electric field Ez. Away from the Dirac point (DP), the spin- and valley-resolved conductances, as functions of U, exhibit resonances while close to it there is a pronounced dip that can be transformed into a transport gap by varying Ez. The charge conductance gc changes from oscillatory to a monotonically decreasing function of d beyond a critical Ez and this can be used to realize electric-field-controlled switching. Further, the field M splits each resonance of gc into two spin-resolved peaks. The spin polarization near the DP increases with Ez or M and becomes nearly perfect above certain of their values. Similar results hold for double barriers.
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