Abstract
Pure and Bi-doped BixCaCu3Ti4O12+1.5x (BCCTO, x=0, 0.15, 0.25, and 0.3) ceramics were fabricated by the solid-state sintering method. The results indicate that the additional bismuth has a great influence on both the microstructures and the electric properties. A new phase (Bi4Ti3O12) can be observed in the doped samples from the x-ray diffraction patterns. Additionally, the CCTO gain size can be controlled by bismuth content. All of the BCCTO samples show high dielectric permittivity (∼104 at 103 Hz) and varistor effect, and the relaxation peak shifts to higher frequency. The resistance rises with the increase in bismuth, and the activation energy at the grain boundary is reduced from 0.65 to 0.47 eV.
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