Elasto-Thermodiffusive Surface Waves in a Semiconductor Half-Space Underlying a Fluid with Varying Temperature

Abstract

The present article is aimed at an investigation of the propagation of elasto-thermodiffusive (ETN) surface waves in a homogenous isotropic, thermoelastic semiconductor material half-space underlying a viscous or inviscid fluid half-space or layer of finite thickness with varying temperature. The relaxation times of heat and charge carrier fields are also taken into consideration during the study. The secular equation that governs the propagation of elasto-thermodiffusive surface (interfacial) waves in the considered composite structures has been derived in compact form after obtaining the general wave solution of the model. Some particular forms of the general secular equation are also deduced and investigated. Numerical solution of secular equation and other relevant relations is carried out for silicon (Si) semiconductor material under different situations with the help of functional iteration numerical technique along with the irreducible case of Cardano's method. The computer-simulated results in respect of dispersion curves, attenuation coefficient, specific loss factor of energy dissipation and relative frequency shift due to loading are presented graphically to illustrate the analytical development. The results have been determined and compared with relevant publications available in the literature at appropriate stages of this work.