Abstract

The theory of photo‐thermoelasticity describes how heating or elastic microstructure mechanical deformation can modify a material’s optical‐thermal properties. This theory particularly highlights the effect of microtemperature on elasticity and efficient heat transport. This work provides a new theoretical framework for thermooptical elastic materials and clarifies the relationship between thermomechanical and plasma waves in microtemperature‐affected semiconductors such as silicon. The model focuses on studying the elasto‐thermodiffusion (ETD) theory’s electron‐hole interaction. Microtemperature effects during photothermal (PT) stimulation are studied in this theory. In one‐dimensional (1D) settings, the Laplace transform is utilized which can be solved using the governing equations for thermoelastic (TD) processes and electronic (ED) deformation processes in a nondimensional form. The proposed model is put to use in analyzing how ramp‐type heating affects an unbounded semiconductor material plane at rest. The discussion section presents a series of graphs to analyze the effect of the main parameters.

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