Abstract
In order to get an insight into the elastic property of nanostructured fcc metal films, the Young's modulus, E f , and the internal friction, Q - 1 f , in Al-Si(Cu) s p and Al s p films prepared by rf-sputtering and those in Al-Si(Cu) v e and Al v e films by vacuum evaporation were studied for the thickness, d, range of 4 to 300 nm, where the mean grain size was below 40 nm. A decrease in E f and an increase in Q - 1 f with decreasing d associated with the grain boundary anelastic process (GBAP) activated above 200 K are commonly observed. GBAP in the nanostructured Al is hardly modified by alloying with Si and Cu, and is very similar to GBAP reported in nanostructured Ag and Au. It is indicated that the elastic property of Al-Si(Cu) s p , Al s p , Al-Si(Cu) v e and Al v e nanocrystalline films is governed by GBAP, the internal stress and the surface oxide layer.
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