Abstract
Elastically strained porous silicon layers on single-crystal substrates are fabricated and examined. It is established that (i) the strain-related properties of the layers can be varied by adjusting the process conditions and (ii) the layers could be useful for the low-temperature gettering of impurities and defects from silicon single crystals.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
