Abstract
We observed the photosensitivity increase and the change of electrical properties of CdMnTe crystals which were photo-excited by pulsed ruby laser radiation (λ = 0.694 µm, tL = 20 ns) with pre-threshold energy density. Changes took place not only in the irradiated part of the samples investigated, but also outside. Analysis of the heat diffusion and the point defect diffusion has shown that these factors cannot be responsible for the laser effect of the long-range action. It could be connected with propagation of the surface elastic wave induced by pulsed laser irradiation. The possible mechanism of the optical excitation of the elastic wave in the semiconductor was analysed. It was determined that decreasing of the energy of the point defects generation takes place as a result of the laser processing.
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