Abstract
We calculate analytically the strain tensor for epitaxial, pseudomorphic heterostructures of arbitrary growth plane for monoclinic and rhombohedral crystals. As numerical examples, we treat heterostructures from sesquioxides, namely, monoclinic (Ga-rich) (Al,Ga)2O3 on β-Ga2O3 and rhombohedral (Al-rich) (Al,Ga)2O3 on α-Al2O3 using realistic material parameters. We predict the strains in laboratory and crystal coordinates and derive properties such as lattice constants and tilt of lattice planes for comparison with X-ray data. Our theory also applies to any higher symmetric structure such as orthorhombic, tetragonal, cubic, and hexagonal heterostructures.
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