Abstract
InAs/AlSb multilayers similar to those used in quantum cascade lasers have been grown by molecular beam epitaxy on (001) InAs substrates. Elastic strain is investigated by high resolution transmission electron microscopy. Thin interfacial regions with lattice distortions significantly different from the strain of the AlSb layers themselves are revealed from the geometrical phase analysis. Strain profiles are qualitatively compared to the chemical contrast of high angle annular dark field images obtained by scanning transmission electron microscopy. The strain and chemical profiles are correlated with the growth sequences used to form the interfaces. Tensile strained AlAs-like interfaces tend to form predominantly due to the high thermal stability of AlAs. Strongly asymmetric interfaces, AlAs-rich and (Al, In)Sb, respectively, can also be achieved by using appropriate growth sequences.
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