Abstract
The molecular-beam epitaxy growth of AlN/GaN nanowire superlattices has been studied by using a combination of in situ x-ray diffraction experiments, high-resolution electron-microscopy analysis and theoretical calculations performed in a valence force field approach. It is found that the nanowire superlattices are in elastic equilibrium, in contrast with the two-dimensional case but in line with the predicted increase in the critical thickness in the nanowire geometry.
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