Abstract
The growth of self-assembled Ge islands on Si(001) surface and changes in the island structure parameters in the course of subsequent annealing were studied. Island structures possessing a small (∼6%) scatter with respect to lateral dimensions and heights of the islands were obtained. The Raman spectra and X-ray diffraction data show evidence that silicon dissolves in the islands. The atomic fraction of Si in the resulting SixGe1−x solid solution was determined and the elastic strain in the islands was measured. It was found that annealing of the heterostructures with islands is accompanied by increasing Si fraction in the islands, which leads to changes in the island shape and size.
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